FQB6N40C: N-Channel QFET® MOSFET 400V, 6A, 1.0Ω

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

Features

• 6 A, 400 V, R_DS(on) = 1.0 Ω (Max.) @ V_GS = 10 V, I_D = 3 A
• Low Gate Charge (Typ. 16nC)
• Low Crss (Typ. 15pF)
• 100% Avalanche Tested

Application Notes