FQB9P25: P-Channel QFET® MOSFET -250 V, -9.4 A, 620 mΩ

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited forhigh efficiency switching DC/DC converters.

Features

• -9.4 A, -250 V, R_DS(on) = 620 mΩ (Max.) @ V_GS = -10 V, I_D = -4.7 A
• Low Gate Charge (Typ. 29 nC)
• Low Crss (Typ. 27 pF)
• 100% Avalanche Tested

Application Notes