FQD4P40: P-Channel QFET® MOSFET -400V, -2.7A, 3.1Ω _ BDTIC a Leading Distributor in China

FQD4P40: P-Channel QFET® MOSFET -400V, -2.7A, 3.1Ω

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.

FQD4P40 Datasheet

Features

-2.7 A, -400 V, R_DS(on) = 3.1 Ω (Max.) @ V_GS = -10 V, I_D = -1.35 A
Low Gate Charge (Typ. 18 nC)
Low Crss (Typ. 11 pF)
100% Avalanche Tested

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
FQD4P40TM	Full Production ROHS Compliant as of 27-Feb-2006 China RoHS	$1.188	TO-252 3L (DPAK) - 2.285 x 6.54 x 9.905mm, TAPE REEL TO-252 3L (DPAK) Drawing Last Update: Jun 2016 TO252-3L, JEDEC OPTION AA REEL PACKING DRAWING Last Update: Oct 2016 TO252-3L, PACKING DRAWING Last Update: May 2013 TO252-3L packing drawing Last Update: May 2013	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2FQD Line 34P40
FQD4P40TM_AM002	Full Production ROHS Compliant as of 27-Feb-2006 China RoHS	$1.188	TO-252 3L (DPAK) - 2.285 x 6.54 x 9.905mm, TAPE REEL TO-252 3L (DPAK) Drawing Last Update: Jun 2016 TO252-3L, JEDEC OPTION AA REEL PACKING DRAWING Last Update: Oct 2016 TO252-3L, PACKING DRAWING Last Update: May 2013 TO252-3L packing drawing Last Update: May 2013	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2FQD Line 34P40