FQP4N20L: N-Channel QFET® MOSFET 200V, 3.8A, 1.35Ω

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.

Features

• 3.8 A, 200 V, R_DS(on) = 1.35 Ω (Max.) @ V_GS = 10 V, I_D = 1.9 A
• Low Gate Charge (Typ. 4.0 nC)
• Low Crss (Typ. 6.0 pF)
• 100% Avalanche Tested

Application Notes