H11D1M: 6-pin DIP High Voltage Phototransistor Output Optocoupler

The 4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

Features

• High Voltage:
  • MOC8204M, BVCEO= 400 V
  • H11D1M, BVCEO= 300 V
  • H11D3M, BVCEO= 200 V
• MOC8204M, BV_CEO= 400 V
• H11D1M, BV_CEO= 300 V
• H11D3M, BV_CEO= 200 V
• Safety and Regulatory Approvals:
  • UL1577, 4,170 VACRMS for 1 Minute
• UL1577, 4,170 VAC_RMS for 1 Minute
• DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage