HUF75321P3: N-Channel UltraFET Power MOSFET 55V, 35A, 34mΩ

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.

HUF75321P3 Datasheet

Features

35A, 55V
Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance SPICE and SABER Models Available on the WEB at: www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
HUF75321P3	Full Production ROHS Compliant as of 27-Feb-2006 China RoHS	$0.882	TO-220 3L - 4.83 x 10.16 x 8.89mm, RAIL TO-220 3L Drawing Last Update: Nov 2015 TO220-3L, JEDEC VARIATION, PACKING DRAWING Last Update: Oct 2013 TO Tube Packing Drawing Last Update: Sep 2015 TO Vacuum Packing Drawing Last Update: Sep 2015	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 275321P