HUF75639G3: N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

HUF75639G3 Datasheet

Features

56A, 100V
Simulation models
Temperature Compensated PSPICE® and SABER™ Electrical Models
SPICE and SABER Thermal Impedance Models
Peak Current vs Pulse Width Curve
UIS Rating CurveThese N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
HUF75639G3	Full Production Green as of Aug 2013 China RoHS	$2.16	TO-247 3L - 4.7 x 15.62 x 20.57mm, RAIL TO-247 3L Drawing Last Update: Sep 2016 TO247-3L, JEDEC OPTION AB, PACKING DRAWING Last Update: Nov 2015	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 275639G