IRFU220B: N-Channel BFET MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features

• 4.6 A, 200 V, R_DS(on) = 800 mΩ @V_GS = 10 V
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 10 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability

Application Notes