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Fairchild Semiconductor
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Bipolar Transistors
> KSD261
KSD261: NPN Epitaxial Silicon Transistor
KSD261 Datasheet
Features
Complement to KSA643
Collector Dissipation : P
C
=500mW
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)Low Frequency Power Amplifier
Ordering Code
Product
Product & Eco Status
Unit Price/1K Order
Packing Method Convention
Package Marking Convention*
KSD261CGTA
Full Production ROHS Compliant as of 27-Feb-2006 China RoHS
$0.0244
TO-92 3L - 4.19 x 5.2 x 21.77mm, AMMO
TO-92 3L Drawing
Last Update: Oct 2015
TO92-3L, PACKING DRAWING
Last Update: May 2014
Line 1
D261
Line 3
GC
&3
(3-Digit Date Code)
KSD261YBU
Obsolete as of 10-Feb-2011 ROHS Compliant as of 27-Feb-2006 Replacement Part: None China RoHS
N/A
TO-92 3L - 5.59 x 5.49 x 21.77mm, BULK
TO-92 3L Drawing
Last Update: Oct 2015
Line 1
D261
Application Notes
AN-1025
Maximum Power Enhancement Techniques for SuperSOT™-3 Power MOSFETs
Last Update : 15-Jun-2015
KSD261.pdf
TO-92 3L Drawing
Last Update: Oct 2015
TO92-3L, PACKING DRAWING
Last Update: May 2014
TO-92 3L Drawing
Last Update: Oct 2015
Maximum Power Enhancement Techniques for SuperSOT™-3 Power MOSFETs
Last Update : 15-Jun-2015
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