NDC7003P: Dual P-Channel Enhancement Mode Field Effect Transistor

These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.

Features

• -0.34 A, -50 V.  
• R_DS(ON) = 5 Ω @ V_GS = -10 V
• R_DS(ON) = 7 Ω @ V_GS = -4.7 V
• Low gate charge
• Fast switching speed
• High performance trench technology for low R_DS(ON)
• SuperSOT™ -6 package: small footprint (72%smaller than standard SO-8); low profile (1mm thick)

Application Notes