NDS0605: P-Channel Enhancement Mode Field Effect Transistor

This P-Channel enhancement mode power field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0605 can be used, with a minimum of effort, in most applications requiring up to 0.18A DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.

Features

• -0.18 A, -60 V. R_DS(ON) = 5 Ω @ V_GS= -10 V.
• Voltage controlled p-channel small signal switch.
• High density cell design for extremely low R_DS(ON).
• High saturation current.

Application Notes