NDS331N: N-Channel Logic Level Enhancement Mode Field Effect Transistor

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other     battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

• 1.3 A, 20 V. R_DS(ON) = 0.21Ω @ V_GS= 2.7 V
  R_DS(ON) = 0.16 Ω @ V_GS= 4.5 V
  
• Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities
  
• High density cell design for extremely low R_DS(ON)
  
• Exceptional on-resistance and maximum DC current capability
  

Application Notes