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DS28E80：Gamma Radiation Resistant 1-Wire Memory

Low-Cost Identification or Calibration Solution for Medical Sensors and Accessories with Single-Contact Operation

The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes. Individual blocks can be write-protected. Each memory block can be written 8 times. The DS28E80 communicates over the single-contact 1-Wire® bus at standard speed or overdrive speed. Each device has its own guaranteed unique 64-bit registration number that is factory programmed into the chip. The communication follows the 1-Wire protocol with a 64-bit registration number acting as node address in the case of a multiple-device 1-Wire network.

Key Features High Gamma Resistance Allows User-Programmable Manufacturing or Calibration Data Before Medical Sterilization Resistant Up to 75kGy (kiloGray) of Gamma Radiation Reprogrammable 248 Bytes of User Memory Lower Block Size Provides Greater Flexibility in Programming User Memory Memory is Organized as 8-Byte Blocks Each Block Can Be Written 8 Times User-Programmable Write Protection for Individual Memory Blocks Advanced 1-Wire Protocol Minimizes Interface to Just Single Contact Compact Package and Single IO Interface Reduces Board Space and Enhances Reliability Unique Factory-Programmed, 64-Bit Identification Number Communicates at 1-Wire Standard Speed (15.3kbps max) and Overdrive Speed (76kbps max) Operating Range: 3.3V ±10%, -40°C to + 85°C Reading, 0°C to +50°C Writing ±8kV HBM ESD Protection (typ) for IO Pin 6-Pin TDFN Package

DS28E80: Typical Operating Circuit Applications/Uses Identification and Calibration Medical Tools/Accessories Identification of Medical Consumables

DataSheet

Parametrics

Design kits & evaluation modules

• DS28E80EVKIT

Quality and Environmental Data

• DS28E80.pdf

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• DS2431：1024-Bit 1-Wire EEPROM

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