Features- Power Monitoring Accuracy capable of 0.1% error across 4000:1 dynamic range
- Built-In Calculations on Fast 16-Bit Processing Core
Active, Reactive, Apparent Power
Active and Reactive Energy Accumulation
True RMS Current, RMS Voltage
Line Frequency, Power Factor
- Active, Reactive, Apparent Power
- Active and Reactive Energy Accumulation
- True RMS Current, RMS Voltage
- Line Frequency, Power Factor
- Dedicated Zero Crossing Detection (ZCD) Pin
- Dedicated PWM Output Pin
- Automatic Event Pin Control through Fast Voltage Surge Detection
- Fast Calibration Routines
- I2C Interface
- 512 bytes User-accessible EEPROM through page read/write commands
- Non-volatile On-chip Memory, no external memory required
- Low-Drift Internal Voltage Reference: 10 ppm/°C typical
- 28-lead 5x5 QFN package
- Extended Temperature Range -40°C to +125°C
- AEC-Q100 Grade 1
| Parameter|
Parameter Name
Value
| Value | |
Measurement Error
0.1%
|
0.1%
| |
Dynamic Range
4000:1
|
4000:1
| |
Voltage Reference Drift ppm typ
10
|
10
| |
PSRR % typ
73 dB
|
73 dB
| |
Temp. Range (°C)
-40 to 125
|
-40 to 125
| |
Analog Supply Voltage AVdd Range (V)
2.7 to 3.6
|
2.7 to 3.6
| |
Digital Supply Voltage DVdd Range (V)
2.7 to 3.6
|
2.7 to 3.6
|
|
