A2G22S160-01S: 1800-2200 MHz, 32 W Avg., 48 V Airfast® RF Power GaN Transistor
The A2G22S160-01SR3 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.
This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
NI-400S-2S Package Image
特性
- High Terminal Impedances for Optimal Broadband Performance
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty Applications
- RoHS Compliant
Data Sheets (1)
Application Notes (1)
Engineering Bulletins (1)
Selector Guides (1)
Package Information (1)
Supporting Information (1)
Printed Circuit Boards
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|
| A2G22S160-01SR3 | Active | 1800 | 2200 | 48 | 51 | 125 | 32 @ AVG | W-CDMA | 19.6 @ 2110 | 38 | 1.7 | Input | AB | GaN |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|
| NI-400S-240 | 98ASA10732D | MPQ - 250 REELPOQ - 250 BOX | Active | A2G22S160-01SR3 | A2G22S160-01SR3.pdf |   | 260 |
