A2T18H455W23N: 1805-1880 MHz, 87 W Avg., 31.5 V Airfast® RF Power LDMOS Transistor
OM-1230-4L2S Package Image
特性
- Advanced High Performance In-Package Doherty
- High Thermal Conductivity Packaging Technology for Reduced Thermal Resistance
- Designed for Wide Instantaneous Bandwidth Applications
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
- Designed for Digital Predistortion Error Correction Systems
- RoHS Compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| A2T18H455W23N 1805-1880 MHz, 87 W Avg, 31.5 V Data Sheet (REV 0) PDF (430.3 kB) A2T18H455W23N | 09 May 2016 |
Application Notes (2)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 | 13 May 2009 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins (REV A) PDF (90.3 kB) 98ASA00885D | 14 Mar 2016 |
Printed Circuit Boards
- A2T18H455W23N 1800 MHz PCB DXF file (REV 3) ZIP A2T18H455W23N_1800_PCB 5/10/2016
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| A2T18H455W23NR6 | Active | 1805 | 1880 | 31.5 | 56.4 | 436 | 87 @ AVG | W-CDMA | 15.9 @ 1880 | 48.4 | 0.23 | I/O | AB, C | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| OM-1230-4L2S | 98ASA00885D | MPQ - 150 REELPOQ - 150 BOX | Active | A2T18H455W23NR6 | A2T18H455W23NR6.pdf |   | 3 | 260 |
- A2T18H455W23N 1805-1880 MHz, 87 W Avg, 31.5 V Data Sheet A2T18H455W23N
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- A2T18H455W23N 1800 MHz PCB DXF file A2T18H455W23N
- 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins A2T21H360-23N
- A2T18H455W23NR6.pdf A2T18H455W23N
