BLC8G20LS-310AV：Power LDMOS transistor

310 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1900 MHz to 2000 MHz.

特性和优势
    • Excellent ruggedness
    • High-efficiency
    • Low thermal resistance providing excellent thermal stability
    • Lower output capacitance for improved performance in Doherty applications
    • Designed for low memory effects providing excellent digital pre-distortion capability
    • Internally matched for ease of use
    • Integrated ESD protection
    • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
应用
    • RF power amplifiers for base stations and multi carrier applications in the 1900 MHz to 2000 MHz frequency range
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range19002000MHz
PL(1dB)nominal output power at 1 dB gain compression310W
Gppower gainPL(AV) = 56 W; VDS = 28 V [0]15.816.9dB
RLininput return lossPL(AV) = 56 W; VDS = 28 V [0]-10-6dB
ηDdrain efficiencyPL(AV) = 56 W [0]3842.5%
PL(M)peak output powerPL(AV) = 56 W [1]281300W
ACPRadjacent channel power ratioPL(AV) = 56 W [0]-33-28dBc
PARooutput peak-to-average ratioPL(AV) = 56 W [1]77.25dB
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLC8G20LS-310AV
DFM6
(SOT1258-3)		sot1258-3_poReel 13" Q1/T1 in Drypack量产Standard MarkingBLC8G20LS-310AVY( 9340 687 41518 )
Tray, NonBakeable, Multiple in Drypack量产Standard MarkingBLC8G20LS-310AVZ( 9340 687 41517 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1D2Pdrain2 (peak)
2D1Mdrain1 (main)
3G1Mgate1 (main)
4G2Pgate2 (peak)
5Ssource
6VDPvideo decoupling (peak)
7VDMvideo decoupling (main)
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLC8G20LS-310AVBLC8G20LS-310AVYAlways Pb-free33
BLC8G20LS-310AVBLC8G20LS-310AVZAlways Pb-free33
文档资料
档案名称标题类型格式日期
BLC8G20LS-310AV (中文)Power LDMOS transistorData sheetpdf2015-05-06
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLC8G20LS-310AV_Data-sheetPCB Design BLC8G20LS-310AV (Data sheet)Design supportzip2015-05-12
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLC8G20LS-310AV_MWO_ModelBLC8G20LS-310AV MWO ModelSimulation modelzip2015-05-12
BLC8G20LS-310AV_ADS-2009_ModelBLC8G20LS-310AV ADS-2009 ModelSimulation modelzip2015-05-12
BLC8G20LS-310AV_ADS-2011_ModelBLC8G20LS-310AV ADS-2011 ModelSimulation modelzip2015-05-12
sot1258-3_poAir cavity plastic earless flanged package; 6 leadsOutline drawingpdf2014-11-19
订购信息
型号订购码 (12NC)可订购的器件编号
BLC8G20LS-310AV9340 687 41518BLC8G20LS-310AVY
BLC8G20LS-310AV9340 687 41517BLC8G20LS-310AVZ
模型
标题类型日期
BLC8G20LS-310AV MWO ModelSimulation model2015-05-12
BLC8G20LS-310AV ADS-2009 ModelSimulation model2015-05-12
BLC8G20LS-310AV ADS-2011 ModelSimulation model2015-05-12
其它
标题类型日期
PCB Design BLC8G20LS-310AV (Data sheet)Design support2015-05-12
Power LDMOS transistor BLC8G20LS-310AV
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
Air cavity plastic earless flanged package; 6 leads BLC8G20LS-400AV
BLC8G20LS-310AV MWO Model BLC8G20LS-310AV
BLC8G20LS-310AV ADS-2009 Model BLC8G20LS-310AV
BLC8G20LS-310AV ADS-2011 Model BLC8G20LS-310AV
PCB Design BLC8G20LS-310AV (Data sheet) BLC8G20LS-310AV
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