BLF7G27L(S)-100:LDMOS功率晶体管

100 W LDMOS功率晶体管,适用于2500 MHz至2700 MHz频率范围的基站应用。

特性和优势
    • 出色的耐用性
    • 高效
    • 内部匹配,便于使用
    • 集成ESD保护
    • 专为低内存占用量设计,提供极佳的预失真性能
    • 低Rth提供极佳的热稳定性
    • 符合欧盟2002/95/EC危害性物质限制指令
应用
    • 适合于基站和多载波应用的RF功率放大器
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF7G27LS-100SOT502B25002700100282818NCDMA/IS95; NCDMA/IS95Production
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF7G27LS-100

(SOT502B)
sot502b_poReel 13" Q1/T1量产Standard MarkingBLF7G27LS-100,118( 9340 645 92118 )
Bulk Pack量产Standard MarkingBLF7G27LS-100,112( 9340 645 92112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF7G27LS-100BLF7G27LS-100,118Always Pb-freeNANA
BLF7G27LS-100BLF7G27LS-100,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF7G27L-100_7G27LS-100 (中文)Power LDMOS transistorData sheetpdf2011-07-22
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
75017202RF power transistors for leading performance in 2.5 to 2.7 GHz LTE applicationsLeafletpdf2011-12-01
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
BLF7G27LS-100_ADS-2009_ModelBLF7G27LS-100 ADS-2009 ModelSimulation modelzip2013-06-25
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
BLF7G27LS-100_ADS-2011_ModelBLF7G27LS-100 ADS-2011 ModelSimulation modelzip2014-04-24
sot502b_poearless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
SOT502B_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF7G27LS-1009340 645 92118BLF7G27LS-100,118
BLF7G27LS-1009340 645 92112BLF7G27LS-100,112
模型
标题类型日期
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
BLF7G27LS-100 ADS-2009 ModelSimulation model2013-06-25
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
BLF7G27LS-100 ADS-2011 ModelSimulation model2014-04-24
Power LDMOS transistor BLF7G27L_S_100
Power LDMOS transistor BLF7G27L_S_100
Power LDMOS transistor BLF7G27L_S_100
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
RF power transistors for leading performance in 2.5 to 2.7 GHz LTE applications BLF7G27L_S_140
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 2 leads BLS7G3135LS-200
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
BLF7G27LS-100 ADS-2009 Model BLF7G27L_S_100
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLF7G27LS-100 ADS-2011 Model BLF7G27L_S_100