BLF879P(S):UHF功率LDMOS晶体管

500 W LDMOS RF功率晶体管,用于广播发射器应用和工业应用。此器件极佳的强度使其成为数字和模拟发射器应用的理想选择。

特性和优势
    • 极佳的强度
    • 最佳热性能和可靠性,Rth(j-c) = 0.15 K/W
    • 高功率增益
    • 高效率
    • 主要用于宽带操作(470 MHz至860 MHz)
    • 内部输入匹配实现高增益和最佳宽带操作
    • 极佳的可靠性
    • 方便的功率控制
    • 符合RoHS的Directive 2002/95/EC
应用
    • UHF频段内的通信发射器应用
    • UHF频段内的工业应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF879PSOT539A470860500424721CW; CWProduction
BLF879PSSOT539B470860500424721CW; CWProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF879P

(SOT539A)
sot539a_poBulk Pack量产Standard MarkingBLF879P,112( 9340 654 68112 )
BLF879PS

(SOT539B)
sot539b_poBulk Pack量产Standard MarkingBLF879PS,112( 9340 670 74112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF879PBLF879P,112Always Pb-freeNANA
BLF879PSBLF879PS,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF879P_BLF879PS (中文)UHF power LDMOS transistorData sheetpdf2013-07-12
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLF879P_Data-sheetPCB Design BLF879P (Data sheet)Design supportzip2012-02-24
75017197RF power UHF/DVB-T broadcasting at its bestLeafletpdf2011-11-29
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
Application_Measurement_Report_BLF879P_470-860MHz_NA-1489Application Measurement Report BLF879P 470-860 MHz NA-1489Reportpdf2015-06-23
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
BLF879P_ADS-2009_ModelBLF879P ADS-2009 ModelSimulation modelzip2013-08-01
sot539b_poearless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
sot539a_poflanged balanced ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
SOT539A_135CDFM4; Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
SOT539A_112CDFM4; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF879P9340 654 68112BLF879P,112
BLF879PS9340 670 74112BLF879PS,112
模型
标题类型日期
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
BLF879P ADS-2009 ModelSimulation model2013-08-01
其它
标题类型日期
PCB Design BLF879P (Data sheet)Design support2012-02-24
UHF power LDMOS transistor BLF879P_S
UHF power LDMOS transistor BLF879P_S
UHF power LDMOS transistor BLF879P_S
Mounting and Soldering of RF transistors aerospace_defense
RF power UHF/DVB-T broadcasting at its best BLF888D_S
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
Application Measurement Report BLF879P 470-860 MHz NA-1489 BLF879P_S
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
CDFM4; Tape reel SMD; standard product orientation 12NC ending 135 BLU6H0410L_S_600P
CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLF879P ADS-2009 Model BLF879P_S
PCB Design BLF879P (Data sheet) BLF879P_S