MMRF2010N: 1030-1090 MHz, 250 W Peak, 50 V RF LDMOS Integrated Power Amplifiers

TO-270WB-14, TO-270WBG-14 Package Images
特性
  • Characterized over 1030-1090 MHz
  • On-chip input (50 Ohm) and interstage matching
  • Single ended
  • Integrated ESD protection
  • Low thermal resistance
  • Integrated quiescent current temperature compensation with enable/disable function
  • RoHS Compliant
特性
  • Driver PA for high power pulse applications
  • IFF and secondary radar
Data Sheets (1)
Name/DescriptionModified Date
MMRF2010N 1030-1090 MHz, 250 W Peak, 50 V Data Sheet (REV 0) PDF (948.7 kB) MMRF2010N21 Oct 2015
Application Notes (4)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN198712 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN197709 Oct 2003
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR161116 May 2016
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins (REV B) PDF (72.7 kB) 98ASA10650D18 Mar 2016
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins (REV B) PDF (77.4 kB) 98ASA10653D26 Feb 2016
Supporting Information (1)
Name/DescriptionModified Date
RF Military High Power Avionics Devices (REV 0) PDF (726.5 kB) MILITARY_HIGH_POWER_RADAR_TRN_SI25 Mar 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MMRF2010NR1Active103010905054250250 @ PeakPulse32.5 @ 103059.11.1InputABLDMOS
MMRF2010GNR1Active103010905054250250 @ PeakPulse32.5 @ 103059.11.1InputABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-270 WB-14 LEAD98ASA10650DMPQ - 500 REELPOQ - 500 REELActiveMMRF2010NR1MMRF2010NR1.pdf3260
TO-270 WB-14 GULL98ASA10653DMPQ - 500 REELPOQ - 500 BOXActiveMMRF2010GNR1MMRF2010GNR1.pdf3260
MMRF2010N 1030-1090 MHz, 250 W Peak, 50 V Data Sheet MMRF2010N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
RF Military High Power Avionics Devices MMRF2010N
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins MMRF2010N
MMRF2010NR1.pdf MMRF2010N
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins MMRF2010N
MMRF2010GNR1.pdf MMRF2010N