MMRF2010N: 1030-1090 MHz, 250 W Peak, 50 V RF LDMOS Integrated Power Amplifiers _ BDTIC 中国领先电子元器件代理商

MMRF2010N: 1030-1090 MHz, 250 W Peak, 50 V RF LDMOS Integrated Power Amplifiers

特性

Characterized over 1030-1090 MHz
On-chip input (50 Ohm) and interstage matching
Single ended
Integrated ESD protection
Low thermal resistance
Integrated quiescent current temperature compensation with enable/disable function
RoHS Compliant

特性

Driver PA for high power pulse applications
IFF and secondary radar

TO-270WB-14, TO-270WBG-14 Package Images

数据手册 (1)

名称/描述	Modified Date
MMRF2010N 1030-1090 MHz, 250 W Peak, 50 V Data Sheet (REV 0) PDF (948.7 kB) MMRF2010N [English]	21 Oct 2015

应用说明 (4)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]	13 May 2009
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]	12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]	09 Oct 2003

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

手册 (1)

名称/描述	Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 [English]	16 May 2016

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins (REV B) PDF (72.7 kB) 98ASA10650D [English]	18 Mar 2016
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins (REV B) PDF (77.4 kB) 98ASA10653D [English]	26 Feb 2016

支持信息 (1)

名称/描述	Modified Date
RF Military High Power Avionics Devices (REV 0) PDF (726.5 kB) MILITARY_HIGH_POWER_RADAR_TRN_SI [English]	25 Mar 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MMRF2010NR1	Active		1030	1090	50	54	250	250 @ Peak	Pulse	32.5 @ 1030	59.1	1.1	Input	AB	LDMOS
MMRF2010GNR1	Active		1030	1090	50	54	250	250 @ Peak	Pulse	32.5 @ 1030	59.1	1.1	Input	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
TO-270 WB-14 LEAD	98ASA10650D	MPQ - 500 REELPOQ - 500 REEL	Active	MMRF2010NR1	MMRF2010NR1.pdf		3	260
TO-270 WB-14 GULL	98ASA10653D	MPQ - 500 REELPOQ - 500 BOX	Active	MMRF2010GNR1	MMRF2010GNR1.pdf		3	260

MMRF2010N 1030-1090 MHz, 250 W Peak, 50 V Data Sheet MMRF2010N

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Aerospace and Defense Solutions Brochure MMRF5300N

RF Products Selector Guide MMT20303H

RF Military High Power Avionics Devices MMRF2010N

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins MMRF2010N

MMRF2010NR1.pdf MMRF2010N

98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins MMRF2010N

MMRF2010GNR1.pdf MMRF2010N

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