MRF5S9080N: 869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts CW, Full Frequency Band (869–894 MHz or 921–960 MHz). Power Gain: 18.5 dB Drain Efficiency: 60%
Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA, Pout = 36 Watts Avg., Full Frequency Band (869–894 MHz or 921–960 MHz). Power Gain: 19 dB Drain Efficiency: 42% Spectral Regrowth @ 400 kHz Offset = –63 dBc Spectral Regrowth @ 600 kHz Offset = –78 dBc EVM: 2.5% rms
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
200°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Name/Description	Modified Date
MRF5S9080NR1 MRF5S9080NBR1 869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs (REV 1) PDF (774.1 kB) MRF5S9080N	31 May 2006

Name/Description	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789	12 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263	07 Jun 2006

Name/Description	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212	19 Jan 2004

Name/Description	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46	26 May 2016

Name/Description	Modified Date
98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins (REV F) PDF (73.4 kB) 98ASA10575D	17 Mar 2016
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D	18 Jan 2016

Product	Status	Status	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	Supply Voltage (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	Output Power (Typ) (W) @ Intermodulation Level at Test Signal	Test Signal	Power Gain (Typ) (dB) @ f (MHz)	Efficiency (Typ) (%)	Thermal Resistance (Spec)(°C/W)	Matching	Class	Die Technology
MRF5S9080NBR1	Not Recommended for New Design		869	960	26	49	80	80 @ CW	1-Tone	18 @ 960	59	0.5	Input	AB	LDMOS
MRF5S9080NR1	No Longer Manufactured		869	960	26	49	80	80 @ CW	1-Tone	18 @ 960	59	0.5	Input	AB	LDMOS

Package Description	Outline Version	Packing	Product Status	Part Number	Chemical Content	RoHS / Pb FreeChina RoHS Lookup	MSL	PPT (°C)
TO-272 WB-4	98ASA10575D	MPQ - 500 REELPOQ - 500 REEL	Not Recommended for New Design	MRF5S9080NBR1	MRF5S9080NBR1.pdf		3	260
TO-270 WB-4	98ASA10577D	MPQ - 500 REELPOQ - 500 REEL	No Longer Manufactured	MRF5S9080NR1	MRF5S9080NR1.pdf		3	260