MRF5S9080N: 869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts CW, Full Frequency Band (869–894 MHz or 921–960 MHz). Power Gain: 18.5 dB Drain Efficiency: 60%
Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA, Pout = 36 Watts Avg., Full Frequency Band (869–894 MHz or 921–960 MHz). Power Gain: 19 dB Drain Efficiency: 42% Spectral Regrowth @ 400 kHz Offset = –63 dBc Spectral Regrowth @ 600 kHz Offset = –78 dBc EVM: 2.5% rms
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
200°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

名称/描述	Modified Date
MRF5S9080NR1 MRF5S9080NBR1 869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs (REV 1) PDF (774.1 kB) MRF5S9080N [English]	31 May 2006

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]	12 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263 [English]	07 Jun 2006

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

名称/描述	Modified Date
98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins (REV F) PDF (73.4 kB) 98ASA10575D [English]	17 Mar 2016
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D [English]	18 Jan 2016

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF5S9080NBR1	Active		869	960	26	49	80	80 @ CW	1-Tone	18 @ 960	59	0.5	Input	AB	LDMOS
MRF5S9080NR1	No Longer Manufactured		869	960	26	49	80	80 @ CW	1-Tone	18 @ 960	59	0.5	Input	AB	LDMOS

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
TO-272 WB-4	98ASA10575D	MPQ - 500 REELPOQ - 500 REEL	Active	MRF5S9080NBR1	MRF5S9080NBR1.pdf		3	260
TO-270 WB-4	98ASA10577D	MPQ - 500 REELPOQ - 500 REEL	No Longer Manufactured	MRF5S9080NR1	MRF5S9080NR1.pdf		3	260