MRF6V10010N: 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET
PLD 1.5 Package Image
特性
- Typical Pulsed Performance: VDD = 50 Volts, IDQ = 10 mA, Pout = 10 Watts Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 µsec, Duty Cycle = 20% Power Gain: 25 dB Drain Efficiency: 69%
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRF6V10010NR4 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET (REV 3) PDF (657.7 kB) MRF6V10010N | 12 Jul 2010 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR1608 | 04 Sep 2015 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
White Papers (2)
| Name/Description | Modified Date |
|---|---|
| Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP | 24 Sep 2015 |
| 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP | 08 Sep 2011 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins (REV E) PDF (51.5 kB) 98ASB15740C | 22 Mar 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF6V10010NR4 | Active | 960 | 1400 | 50 | 40 | 10 | 10 @ Peak | Pulse | 25 @ 1090 | 69 | 1.6 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| PLD-1.5 | 98ASB15740C | MPQ - 100 REELPOQ - 100 BOX | Active | MRF6V10010NR4 | MRF6V10010NR4.pdf |  | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Solutions for Commercial Aerospace mrfe6vs25n
- RF Products Selector Guide MMT20303H
- Designing with Plastic RF Power Transistors White Paper mrf1570n
- 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
- 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins MRFG35003N6AT1
- MRF6V10010NR4.pdf MRF6V10010N
