名称/描述 | Modified Date |
---|---|
MRF6V10010NR4 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET (REV 3) PDF (657.7 kB) MRF6V10010N [English] | 12 Jul 2010 |
名称/描述 | Modified Date |
---|---|
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English] | 29 Apr 2014 |
名称/描述 | Modified Date |
---|---|
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English] | 19 Jan 2004 |
名称/描述 | Modified Date |
---|---|
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR1608 [English] | 04 Sep 2015 |
名称/描述 | Modified Date |
---|---|
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English] | 26 May 2016 |
名称/描述 | Modified Date |
---|---|
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP [English] | 24 Sep 2015 |
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP [English] | 08 Sep 2011 |
名称/描述 | Modified Date |
---|---|
98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins (REV E) PDF (51.5 kB) 98ASB15740C [English] | 22 Mar 2016 |
型号 | 状态 | 状态 | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | 供电电压 (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | 输出功率 (Typ) (W) @ Intermodulation Level at Test Signal | 测试信号 | 功率增益 (Typ) (dB) @ f (MHz) | 效率 (Typ) (%) | 热阻 (Spec)(°C/W) | 匹配 | 类型 | 模具技术 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MRF6V10010NR4 | Active | 960 | 1400 | 50 | 40 | 10 | 10 @ Peak | Pulse | 25 @ 1090 | 69 | 1.6 | I/O | AB | LDMOS |
封装说明 | Outline Version | 包装 | 产品状态 | 部件编号 | 化学成分 | RoHS / Pb Free中国RoHS查询 | MSL | PPT (°C) |
---|---|---|---|---|---|---|---|---|
PLD-1.5 | 98ASB15740C | MPQ - 100 REELPOQ - 100 BOX | Active | MRF6V10010NR4 | MRF6V10010NR4.pdf | 3 | 260 |