MRF6V10010N: 1090 MHz,10 W,50 V脉冲射频功率LDMOS

特性
  • 典型脉冲性能:VDD = 50 V,IDQ = 10 mA,输出功率 = 10 W峰值(2 W平均值),f = 1090 MHz,脉冲宽度 = 100 µsec,占空比 = 20% 功率增益:25 dB 漏极效率:69%
  • 提供串联等效大信号阻抗参数
  • 工作电压最高可达50 VDD
  • 集成的ESD保护
  • 增大负栅源电压范围,改善C类放大器运行
  • 符合RoHS规范
  • 采用盘卷包装。R4后缀 = 100个,12 mm卷带宽度,7英寸卷盘。
PLD 1.5 Package Image
数据手册 (1)
名称/描述Modified Date
MRF6V10010NR4 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET (REV 3) PDF (657.7 kB) MRF6V10010N [English]12 Jul 2010
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR1608 [English]04 Sep 2015
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (2)
名称/描述Modified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP [English]24 Sep 2015
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP [English]08 Sep 2011
封装信息 (1)
名称/描述Modified Date
98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins (REV E) PDF (51.5 kB) 98ASB15740C [English]22 Mar 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF6V10010NR4Active960140050401010 @ PeakPulse25 @ 1090691.6I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
PLD-1.598ASB15740CMPQ - 100 REELPOQ - 100 BOXActiveMRF6V10010NR4MRF6V10010NR4.pdf3260
MRF6V10010NR4 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET mrf6v10010n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Solutions for Commercial Aerospace mrfe6vs25n
RF Products Selector Guide MMT20303H
Designing with Plastic RF Power Transistors White Paper mrf1570n
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins MRFG35003N6AT1
MRF6V10010NR4.pdf MRF6V10010N