MRF8P9040N: 728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE RF Power LDMOS Transistors

TO-272 WB-4, TO-270 WB-4, TO-270 WB-4 Gull Package Image
特性
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRF8P9040NR1, MRF8P9040GNR1, MRF8P9040NBR1 728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE Lateral N-Channel RF Power... (REV 1) PDF (842.0 kB) MRF8P9040N20 Oct 2010
Application Notes (4)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN326307 Jun 2006
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (3)
Name/DescriptionModified Date
98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins (REV F) PDF (73.4 kB) 98ASA10575D17 Mar 2016
98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins (REV E) PDF (75.2 kB) 98ASA10578D17 Mar 2016
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D18 Jan 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF8P9040NR1Active7289602846.2424 @ AVGW-CDMA19.1 @ 96019.91.5InputABLDMOS
MRF8P9040GNR1Active7289602846.2424 @ AVGW-CDMA19.1 @ 96019.91.5InputABLDMOS
MRF8P9040NBR1No Longer Manufactured7289602846.2424 @ AVGW-CDMA19.1 @ 96019.91.5InputABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-270 WB-498ASA10577DMPQ - 500 REELPOQ - 500 REELActiveMRF8P9040NR1MRF8P9040NR1.pdf3260
TO-270 WB-4 GULL98ASA10578DMPQ - 500 REELPOQ - 500 REELActiveMRF8P9040GNR1MRF8P9040GNR1.pdf3260
TO-272 WB-498ASA10575DMPQ - 500 REELPOQ - 500 REELNo Longer ManufacturedMRF8P9040NBR1MRF8P9040NBR1.pdf3260
MRF8P9040NR1, MRF8P9040GNR1, MRF8P9040NBR1 728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE Lateral N-Channel RF Power... MRF8P9040N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins aft09mp055n
MRF8P9040NR1.pdf MRF8P9040N
98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins aft09mp055n
MRF8P9040GNR1.pdf MRF8P9040N
98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins MMRF1018N
MRF8P9040NBR1.pdf MRF8P9040N