MRF8P9040N: 728-960 MHz，4.0 W平均值，28 V CDMA，W-CDMA，LTE射频功率LDMOS晶体管 _ BDTIC 中国领先电子元器件代理商

MRF8P9040N: 728-960 MHz，4.0 W平均值，28 V CDMA，W-CDMA，LTE射频功率LDMOS晶体管

特性

提供串联等效大信号阻抗参数和共源S参数
内部匹配，简便易用
集成的ESD保护
增大负栅源电压范围，改善C类放大器运行
专为数字预失真纠错系统而设计
为Doherty应用进行了优化
可耐225°C高温的塑料封装
符合RoHS规范
采用盘卷包装。R1后缀 = 500个，44 mm卷带宽度，13英寸卷盘。

TO-272 WB-4, TO-270 WB-4, TO-270 WB-4 Gull Package Image

数据手册 (1)

名称/描述	Modified Date
MRF8P9040NR1, MRF8P9040GNR1, MRF8P9040NBR1 728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE Lateral N-Channel RF Power... (REV 1) PDF (842.0 kB) MRF8P9040N [English]	20 Oct 2010

应用说明 (4)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]	12 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263 [English]	07 Jun 2006

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (3)

名称/描述	Modified Date
98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins (REV F) PDF (73.4 kB) 98ASA10575D [English]	17 Mar 2016
98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins (REV E) PDF (75.2 kB) 98ASA10578D [English]	17 Mar 2016
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D [English]	18 Jan 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF8P9040NR1	Active		728	960	28	46.2	42	4 @ AVG	W-CDMA	19.1 @ 960	19.9	1.5	Input	AB	LDMOS
MRF8P9040GNR1	Active		728	960	28	46.2	42	4 @ AVG	W-CDMA	19.1 @ 960	19.9	1.5	Input	AB	LDMOS
MRF8P9040NBR1	No Longer Manufactured		728	960	28	46.2	42	4 @ AVG	W-CDMA	19.1 @ 960	19.9	1.5	Input	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
TO-270 WB-4	98ASA10577D	MPQ - 500 REELPOQ - 500 REEL	Active	MRF8P9040NR1	MRF8P9040NR1.pdf		3	260
TO-270 WB-4 GULL	98ASA10578D	MPQ - 500 REELPOQ - 500 REEL	Active	MRF8P9040GNR1	MRF8P9040GNR1.pdf		3	260
TO-272 WB-4	98ASA10575D	MPQ - 500 REELPOQ - 500 REEL	No Longer Manufactured	MRF8P9040NBR1	MRF8P9040NBR1.pdf		3	260

MRF8P9040NR1, MRF8P9040GNR1, MRF8P9040NBR1 728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE Lateral N-Channel RF Power... MRF8P9040N

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Products Selector Guide MMT20303H

98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins aft09mp055n

MRF8P9040NR1.pdf MRF8P9040N

98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins aft09mp055n

MRF8P9040GNR1.pdf MRF8P9040N

98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins MMRF1018N

MRF8P9040NBR1.pdf MRF8P9040N

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