MBR140ESF: 40 V, 1.0 A Schottky Rectifier Low Leakage
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.
Features- Guardring for Stress Protection
- Low Reverse Leakage
- 175C Operating Junction Temperature
- Epoxy Meets UL 94 V0 @ 0.125 in
- Package Designed for Optimal Automated Board Assembly
- ESD Rating: (Human Body Model = 3B, Machine Model = M4)
- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
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Simulation Models (4)
Package Drawings (1)
Data Sheets (1)
Order Information
Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
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MBR140ESFT1G | Active | AEC Qualified
Pb-free
Halide free | SOD123-2 | 498-01 | 1 | Tape and Reel | 3000 | $0.0503 |
MBR140ESFT3G | Active | AEC Qualified
Pb-free
Halide free | SOD123-2 | 498-01 | 1 | Tape and Reel | 10000 | $0.0503 |
NRVB140ESFT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SOD123-2 | 498-01 | 1 | Tape and Reel | 3000 | $0.0553 |
NRVB140ESFT3G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SOD123-2 | 498-01 | 1 | Tape and Reel | 10000 | $0.0553 |
Specifications
Product | Configuration | VRRM Min (V) | VF Max (V) | IRM Max (µA) | IO(rec) Max (A) | IFSM Max (A) | trr Max (ns) | Cj Max (pF) |
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MBR140ESFT1G | | 40 | 0.51 | | 1 | 30 | | |
MBR140ESFT3G | | 40 | 0.51 | | 1 | 30 | | |
NRVB140ESFT1G | | 40 | 0.51 | | 1 | 30 | | |
NRVB140ESFT3G | | 40 | 0.51 | | 1 | 30 | | |