N-channel Silicon Carbide Power MOSFET - SCT3017AL
SCT3017AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| Part Number | Status | Package | Unit Quantity | Minimum Package Quantity | Packing Type | RoHS |
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| SCT3017ALC11 | Active | TO-247N | 450 | 30 | Tube | Yes |
SCT3017AL Data Sheet
Specifications| Drain-source Voltage[V] | 650 | | Drain-source On-state Resistance(Typ.)[mΩ] | 17 | | Drain Current[A] | 118.0 | | Total Power Dissipation[W] | 427 | | Junction Temperature(Max.)[°C] | 175 | | Storage Temperature (Min.)[°C] | -55 | | Storage Temperature (Max.)[°C] | 175 |
| Technical Documents |
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