2SD1047：High power NPN epitaxial planar bipolar transistor
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
Key Features
- High breakdown voltage VCEO = 140 V
- Typical ft = 20 MHz
- Fully characterized at 125 oC
Product Specifications
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| 2SD1047 | TO-3P | Tube | - | - | NEC | EAR99 | KOREA (south) |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| 2SD1047 | TO-3P | Industrial | Ecopack1 | |
