BDX54C:Complementary power Darlington transistors

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Key Features

  • Good hFE linearity
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
  • High fT frequency
Product Specifications
DescriptionVersionSize
DS0845: Complementary power Darlington transistors4.283 KB
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
BDX54CTO-220ABTube0.296500NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
BDX54CTO-220ABIndustrialEcopack2md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldz-wspc-bd01t6f_vers2_sdm_signed.pdf
md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldz-wspc-bd01t6f_vers2_sdm.xml
Complementary power Darlington transistors BDX54C
md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldz-wspc-bd01t6f_vers2_sdm_signed.pdf TIP125
md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldz-wspc-bd01t6f_vers2_sdm.xml TIP125