STGB20M65DF2：Trench gate field-stop IGBT M series, 650 V 20 A low loss
This device is an IGBT developed using an advanced proprietary trench gate field-stop
structure. The device is part of the M series IGBTs, which represent an optimal balance
between inverter system performance and efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and
tight parameter distribution result in safer paralleling operation.
Key Features
- High short-circuit withstand time
- VCE(sat)
= 1.55 V (typ.) @ IC
= 20 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
Product Specifications
Application Notes
HW Model & CAD Libraries
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGB20M65DF2 | D2PAK | Tape And Reel | 1.2 | 1000 | NEC | EAR99 | CHINA |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGB20M65DF2 | D2PAK | Industrial | Ecopack2 | |
