STGB7H60DF：Trench gate field-stop IGBT, H series 600 V, 7 A high speed
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.
Key Features
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode
Product Specifications
Application Notes
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGB7H60DF | D2PAK | Tape And Reel | - | - | NEC | EAR99 | CHINA |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGB7H60DF | D2PAK | Industrial | Ecopack2 | |
