STGWA80H65DFB：Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ
= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)
= 1.6 V(typ) @ IC
= 80 A
- Safe paralleling
- Tight parameter distribution
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Product Specifications
Application Notes
HW Model & CAD Libraries
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGWA80H65DFB | TO-247 long leads | Tube | 5.2 | 1000 | NEC | EAR99 | CHINA |
Quality & Reliability
