STGWT30H60DFB：Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ
= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)
= 1.55 V (typ.) @ IC
= 30 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Product Specifications
Application Notes
HW Model & CAD Libraries
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGWT30H60DFB | TO-3P | Tube | 2.35 | 1000 | NEC | EAR99 | KOREA (south) |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGWT30H60DFB | TO-3P | Industrial | Ecopack1 | |
