STH410N4F7-2AG：Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate
structure that results in very low on-state resistance, while also reducing internal
capacitance and gate charge for faster and more efficient switching.
Key Features
- Designed for automotive applications and AEC-Q101 qualified
- Among the lowest RDS(on)
on the market
- Excellent figure of merit (FoM)
- Low Crss
/Ciss
ratio for EMI immunity
- High avalanche ruggedness
Product Specifications
Application Notes
User Manuals
HW Model & CAD Libraries
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STH410N4F7-2AG | H2PAK-2 | Tape And Reel | 5.3 | 1000 | NEC | EAR99 | CHINA |
Quality & Reliability
