STP110N8F6:N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Product Specifications
Application Notes
User Manuals
HW Model & CAD Libraries
Brochures
Software Development Tools
Part Number | Manufacturer | Description |
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ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
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STP110N8F6 | TO-220AB | Tube | - | - | NEC | EAR99 | CHINA |
Quality & Reliability