STPSC10H065：650 V power Schottky silicon carbide diode
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a
silicon carbide substrate. The wide band gap material allows the design of a Schottky diode
structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at
turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is
independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost the performance
in hard switching conditions. Its high forward surge capability ensures a good robustness
during transient phases.
Key Features
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- Insulated package: TO-220AC Ins
- Insulated voltage: 2500 VRMS
sine
- Typical package capacitance: 7 pF
Product Specifications
Application Notes
Technical Notes & Articles
HW Model & CAD Libraries
Presentations
Flyers
Selection Guides
Brochures
Conference Papers
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-DIODE-FINDER | ST | Diode product finder application for Android and iOS |
Sample & Buy
| Part Number | Unit Price (US$)
* | Quantity | Package | Packing Type | Junction Temperature (°C) (max) | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STPSC10H065D | 1.801 | 100 | TO-220AC | Tube | 175 | NEC | EAR99 | CHINA |
| STPSC10H065B-TR | 1.761 | 100 | DPAK | Tape And Reel | 175 | NEC | EAR99 | CHINA |
| STPSC10H065DI | 2.001 | 100 | TO-220AC Ins | Tube | 175 | NEC | EAR99 | CHINA |
Quality & Reliability
