STPSC10H12：1200V Power Schottky Silicon Carbide diode
The SiC diode, available in TO-220AC, is an ultrahigh performance power Schottky
rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap
material allows the design of a low VF Schottky diode structure with a 1200 V
rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing
patterns are negligible. The minimal capacitive turn-off behavior is independent of
temperature. Especially suited for use in PFC and secondary side applications, this ST
SiC diode will boost the performance in hard switching conditions. This rectifier will
enhance the performance of the targeted application. Its high forward surge capability
ensures a good robustness during transient phases.
Key Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
Product Specifications
Application Notes
Technical Notes & Articles
HW Model & CAD Libraries
Presentations
Flyers
Selection Guides
Brochures
Conference Papers
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-DIODE-FINDER | ST | Diode product finder application for Android and iOS |
Sample & Buy
| Part Number | Unit Price (US$)
* | Quantity | Package | Packing Type | Junction Temperature (°C) (max) | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STPSC10H12G-TR | - | - | D2PAK | Tape And Reel | 175 | NEC | EAR99 | - |
| STPSC10H12B-TR1 | - | - | DPAK HV 2L | Tape And Reel | 175 | NEC | EAR99 | - |
| STPSC10H12D | 3.159 | 50 | TO-220AC | Tube | 175 | NEC | EAR99 | CHINA |
Quality & Reliability
