STPSC12H065C：650 V power Schottky silicon carbide diode
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature.
Especially suited for use in interleaved or bridge-less topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Key Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- High forward surge capability
- ECOPACK®
2 compliant component
Product Specifications
Application Notes
Technical Notes & Articles
HW Model & CAD Libraries
Presentations
Flyers
Selection Guides
Brochures
Conference Papers
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-DIODE-FINDER | ST | Diode product finder application for Android and iOS |
Sample & Buy
| Part Number | Unit Price (US$)
* | Quantity | Package | Packing Type | Junction Temperature (°C) (max) | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STPSC12H065CT | 2.161 | 100 | TO-220AB | Tube | 175 | NEC | EAR99 | CHINA |
Quality & Reliability
