STPSC20065：650 V power Schottky silicon carbide diode
The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material allows the design of a Schottky diode
structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at
turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior
is independent of temperature.
Used as a freewheeling or output rectification diode, this rectifier will enhance the
performance and form factor of the targeted power supply or inverter.
Key Features
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Dedicated to PFC applications
- Insulated package TO-220AC ins:
- Insulated voltage: 2500 V
rms
- Typical package capacitance: 7
pF
- High forward surge capability
- ECOPACK®2 compliant component
- Maximum operating: Tj
= 175 °C
Product Specifications
Application Notes
Technical Notes & Articles
HW Model & CAD Libraries
Presentations
Flyers
Selection Guides
Brochures
Conference Papers
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-DIODE-FINDER | ST | Diode product finder application for Android and iOS |
Sample & Buy
| Part Number | Unit Price (US$)
* | Quantity | Package | Packing Type | Junction Temperature (°C) (max) | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STPSC20065D | 3.201 | 100 | TO-220AC | Tube | 175 | NEC | EAR99 | CHINA |
| STPSC20065DI | 3.401 | 100 | TO-220AC Ins | Tube | 175 | NEC | EAR99 | CHINA |
| STPSC20065W | 3.401 | 100 | DO-247 | Tube | 175 | NEC | EAR99 | CHINA |
Quality & Reliability
