STPSC4H065：650 V power Schottky silicon carbide diode
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Key Features
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- High forward surge capability
- Insulated package TO-220AC Ins:
- Insulated voltage: 2500 V rms
- Typical package capacitance: 7 pF
Product Specifications
Application Notes
Technical Notes & Articles
HW Model & CAD Libraries
Presentations
Flyers
Selection Guides
Brochures
Conference Papers
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-DIODE-FINDER | ST | Diode product finder application for Android and iOS |
Sample & Buy
| Part Number | Unit Price (US$)
* | Quantity | Package | Packing Type | Junction Temperature (°C) (max) | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STPSC4H065D | 0.72 | 100 | TO-220AC | Tube | 175 | NEC | EAR99 | CHINA |
| STPSC4H065DI | 0.92 | 100 | TO-220AC Ins | Tube | 175 | NEC | EAR99 | CHINA |
| STPSC4H065B-TR | 0.68 | 100 | DPAK | Tape And Reel | 175 | NEC | EAR99 | CHINA |
Quality & Reliability
