STPSC6C065-Y：Automotive 650 V power Schottky silicon carbide diode
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a
silicon carbide substrate. The wide band gap material allows the design of a Schottky diode
structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at
turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is
independent of temperature and is ideal for automotive applications.
Especially suited for use as boost diode, this rectifier will enhance the performance in hard
switching conditions. Its high forward surge capability ensures a good robustness during
transient phases.
Key Features
- AEC-Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- PPAP capable
- ECOPACK®2 compliant component
Product Specifications
Application Notes
Technical Notes & Articles
Flyers
Conference Papers
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-DIODE-FINDER | ST | Diode product finder application for Android and iOS |
Sample & Buy
| Part Number | Unit Price (US$)
* | Quantity | Package | Packing Type | Junction Temperature (°C) (max) | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STPSC6C065DY | 1.1 | 100 | TO-220AC | Tube | 175 | NEC | EAR99 | CHINA |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STPSC6C065DY | TO-220AC | Automotive | Ecopack2 | |
