STPSC6H12:1200 V power Schottky silicon carbide diode

ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required.

The STPSC6H12 helps to increase the application efficiency yield by up to 2% thanks to its ability to work at high frequency whatever the temperature.

The central lead of the DPAK package is removed to meet the IEC60664 and UL 840 standard requirements for a higher voltage.

These characteristics make it the best-in-class 1200 V diode.

Key Features

  • High frequency free-wheel / boost diode
  • Robust high-voltage periphery
  • Ultrafast high voltage switching independent of temperature
Product Specifications
DescriptionVersionSize
DS9659: 1200 V power Schottky silicon carbide diode5.0261 KB
Application Notes
DescriptionVersionSize
AN4242: New generation of 650 V SiC diodes1.22 MB
Technical Notes & Articles
DescriptionVersionSize
TN1173: Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches4.0330 KB
HW Model & CAD Libraries
DescriptionVersionSize
Silicon-carbide Schottky diode PSpice models (.lib & .olb)5.0180 KB
Presentations
DescriptionVersionSize
Silicon-carbide diode product presentation1.01022 KB
Flyers
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Automotive-grade SiC diodes with very low forward voltage drop1.01 MB
Silicon-carbide diodes1.01 MB
Selection Guides
DescriptionVersionSize
Diodes and rectifiers selection guide2.0815 KB
Brochures
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Brochure Power management guide05.20164 MB
Products and solutions for solar energy1.01 MB
Conference Papers
DescriptionVersionSize
Wide bandgap materials: revolution in automotive power electronics1.0792 KB
Software Development Tools
Part NumberManufacturerDescription
ST-DIODE-FINDERSTDiode product finder application for Android and iOS
Sample & Buy
Part NumberUnit Price (US$) *QuantityPackagePacking TypeJunction Temperature (°C) (max)ECCN (EU)ECCN (US)Country of Origin
STPSC6H12B-TR11.85350DPAK HV 2LTape And Reel175NECEAR99PHILIPPINES
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STPSC6H12B-TR1DPAK HV 2LIndustrialEcopack1md_a0tj-wspc-dpak-wspc-hv-wspc-2-wspc-leads_7ptjdc121y4-wspc-(stpsc6h12b-tr1)-wspc-wcp-wspc-ver2_signed.pdf
md_a0tj-wspc-dpak-wspc-hv-wspc-2-wspc-leads_7ptjdc121y4-wspc-(stpsc6h12b-tr1)-wspc-wcp-wspc-ver2.xml
1200 V power Schottky silicon carbide diode STPSC6H12
New generation of 650 V SiC diodes STTH8R06
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches FLC21
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STTH15S12
Very low drop voltage regulators with inhibit KFXX
Description of UFDFPN5, UFDFPN8 and WFDFPN8 for STMicroelectronics EEPROMs and recommendations for use M95080-DRE
Spice model tutorial for Power MOSFETs SCTWA50N120
md_a0tj-wspc-dpak-wspc-hv-wspc-2-wspc-leads_7ptjdc121y4-wspc-(stpsc6h12b-tr1)-wspc-wcp-wspc-ver2_signed.pdf STPSC6H12
md_a0tj-wspc-dpak-wspc-hv-wspc-2-wspc-leads_7ptjdc121y4-wspc-(stpsc6h12b-tr1)-wspc-wcp-wspc-ver2.xml STPSC6H12