STRH8N10：Rad-Hard N-Channel 100V - 6A MOSFET
This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects.
This Power MOSFET is fully ESCC qualified.
Key Features
- Fast switching
- 100% avalanche tested
- Hermetic package
- 50 krad TID
- SEE radiation hardened
Product Specifications
Technical Notes & Articles
HW Model & CAD Libraries
Selection Guides
Sample & Buy
| Part Number | SMD PIN/Detailed Spec | Quality Level | EPPL | Hi-Rel Package | Lead Finish | Packing Type | Package: Product Marking | Mass (gr) | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STRH8N10S1 | - | Engineering Model | - | SMD.5 | Gold | Carrier Tape | - | - | NEC | EAR99 | FRANCE |
| STRH8N10SG | 5205/023/01 | ESCC Flight | - | SMD.5 | Gold | Carrier Tape | - | - | NEC | EAR99 | FRANCE |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STRH8N10S1 | SMD.5 parallel seam welding EM | Industrial | N/A | |
| STRH8N10SG | SMD.5 parallel seam welding FP | Industrial | N/A | |
