STW4N150:N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-247
Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
Key Features
- 100% avalanche tested
- High speed switching
- Intrinsic capacitances and Qg minimized
- Creepage distance path is 5.4 mm (typ.) for TO-3PF
- Fully isolated TO-3PF plastic packages
Product Specifications
Application Notes
Technical Notes & Articles
User Manuals
HW Model & CAD Libraries
Brochures
Software Development Tools
Part Number | Manufacturer | Description |
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ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
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STW4N150 | TO-247 | Tube | - | - | NEC | EAR99 | CHINA |
Quality & Reliability