PNP低VCEsat突破性小信号(BISS)晶体管与N沟道Trench MOSFET的组合。该器件采用无引脚中等功率SOT1118表面贴装器件(SMD)塑料封装。
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40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET (REV 2.0) PDF (795.0 kB) PBSM5240PF [English] | 22 Apr 2011 |
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Protecting charger interfaces and typical battery charging topologies with external bypass transistors (REV 2.0) PDF (204.0 kB) AN10910 [English] | 01 Jul 2011 |
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DFN2020-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm (REV 1.0) PDF (198.0 kB) SOT1118 [English] | 08 Feb 2016 |
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DFN2020-6; reel pack; standard orientation; 12NC ending 115 (REV 1.0) PDF (196.0 kB) SOT1118_115 [English] | 07 Nov 2012 |
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PBSM5240PF NXP® Product Reliability (REV 1.1) PDF (82.0 kB) PBSM5240PF_1 [English] | 31 Jan 2015 |
PBSM5240PF NXP Product Quality (REV 1.2) PDF (74.0 kB) PBSM5240PF_NXP_PRODUCT_QUALITY [English] | 31 Jan 2015 |
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Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English] | 30 Sep 2013 |
型号 | 状态 | Package version | Package name | 大小 (mm) | transistor polarity | Transistor polarity | Ptot [max] (mW) | number of transistors | VCEO [max] (V) | IC [max] (A) | ICM [max] (A) | hFE [min] | hFE [typ] | fT [min] (MHz) | fT [typ] (MHz) | RCEsat [typ] (mΩ) | RCEsat [max] (mΩ) | VCEsat [max] (mV) |
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PBSM5240PF | Active | SOT1118 | DFN2020-6 | 2 x 2 x 0.65 | PNP | 1250 | 1 | -40 | -1.8 | -3 | 300 | 150 | 240 | 340 | -310 |
产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | EFR | IFR(FIT) | MTBF(小时) | MSL | MSL LF |
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PBSM5240PF | SOT1118 | Reflow_Soldering_Profile | Reel 7" Q1/T1 | Active | PBSM5240PF,115 (9340 651 27115) | 1G | PBSM5240PF | Always Pb-free | 153.0 | 0.71 | 1.41E9 | 1 | 1 |