PMDT670UPE: 20 V，550 mA双P沟道Trench MOSFET
双P沟道增强型场效应晶体管(FET)，采用具有MOSFET技术的超小型扁平引脚SOT666表面贴装器件(SMD)塑料封装。
SOT666
数据手册 (1)
| 名称/描述 | Modified Date |
|---|---|
| 20 V, 550 mA P-channel Trench MOSFET (REV 1.0) PDF (172.0 kB) PMDT670UPE [English] | 15 Sep 2011 |
应用说明 (10)
| 名称/描述 | Modified Date |
|---|---|
| Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English] | 13 Jul 2016 |
| Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English] | 10 Dec 2015 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English] | 22 May 2014 |
| Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English] | 19 May 2014 |
| Understanding power MOSFET data sheet parameters (REV 4.0) PDF (571.0 kB) AN11158 [English] | 04 Feb 2014 |
| Understanding power MOSFET data sheet parameters (REV 3.0) PDF (903.0 kB) AN11158_ZH [English] | 08 Nov 2013 |
| Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English] | 29 Oct 2012 |
| LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English] | 14 Sep 2012 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English] | 16 Nov 2011 |
| LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English] | 27 Jan 2011 |
选型工具指南 (3)
| 名称/描述 | Modified Date |
|---|---|
| Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English] | 17 Feb 2016 |
| NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English] | 11 Sep 2014 |
| Broad small-signal MOSFET portfolio to suit a wide range of applications (REV 1.0) PDF (3.3 MB) 75017288 [English] | 23 Aug 2012 |
封装信息 (1)
| 名称/描述 | Modified Date |
|---|---|
| plastic surface-mounted package; 6 leads (REV 1.0) PDF (188.0 kB) SOT666 [English] | 08 Feb 2016 |
包装 (1)
| 名称/描述 | Modified Date |
|---|---|
| Tape reel SMD; standard product orientation 12NC ending 115 (REV 1.0) PDF (178.0 kB) SOT666_115 [English] | 29 Nov 2012 |
可靠性与质量信息 (2)
| 名称/描述 | Modified Date |
|---|---|
| PMDT670UPE NXP® Product Reliability (REV 1.1) PDF (84.0 kB) PMDT670UPE_1 [English] | 31 Jan 2015 |
| PMDT670UPE NXP® Product Quality (REV 1.1) PDF (74.0 kB) PMDT670UPE_NXP_PRODUCT_QUALITY [English] | 31 Jan 2015 |
支持信息 (2)
| 名称/描述 | Modified Date |
|---|---|
| Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English] | 07 Aug 2015 |
| Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English] | 30 Sep 2013 |
S-参数
- PMDT670UPE.06_02_2012 Spice parameter (REV 1.0) lib PMDT670UPE_06_02_2012 4/16/2012
订购信息
| 型号 | 状态 | Package version | Package name | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | ID [max] (A) | Tj [max] (°C) | QGD [typ] (nC) | RDSon [typ] @ VGS = 4.5 V (mΩ) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] (nC) | Ptot [max] (W) | QG(tot) [typ] @ VGS = 10 V (nC) | RDSon [typ] @ VGS = 2.5 V (mΩ) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | ID [max] @ T = 100 °C (A) | IDM [max] (A) | Ciss [typ] (pF) | Coss [typ] (pF) | 日期 | Rth(j-mb) [max] (K/W) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMDT670UPE | Active | SOT666 | SOT666 | P | 2 | -20 | 850 | 1500 | -0.55 | 150 | 0.18 | 670 | 0.76 | 0.76 | 0.33 | 1200 | -0.8 | Y | -0.35 | -2.2 | 58 | 21 | 2011-09-15 | 58 |
封装环保信息
| 产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | EFR | IFR(FIT) | MTBF（小时） | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMDT670UPE | | SOT666 | Reflow_Soldering_Profile | Reel 7" Q1/T1 | Active | PMDT670UPE,115 (9340 657 34115) | AG | PMDT670UPE |    | Always Pb-free | 149.0 | 0.69 | 1.45E9 | 1 | 1 |
- 20 V, 550 mA P-channel Trench MOSFET pmdt670upe
- Using power MOSFETs in parallel BUK7M12-60E
- Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
- LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
- Using RC Thermal Models BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7K6R8-40E
- Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
- LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
- LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
- LFPAK MOSFET thermal design guide BUK7M12-60E
- Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
- NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
- Broad small-signal MOSFET portfolio to suit a wide range of applications BSS84AKW
- PMDT670UPE NXP® Product Reliability pmdt670upe
- PMDT670UPE NXP® Product Quality pmdt670upe
- Power MOSFET frequently asked questions and answers BUK7M12-60E
- PMDT670UPE.06_02_2012 Spice parameter PMDT670UPE
- plastic surface-mounted package; 6 leads BSS84AKV
- Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
- Tape reel SMD; standard product orientation 12NC ending 115 BSS84AKV
- 1PSXSB17
