Silicon Carbide diodes ( 4 )

NXP’s first generation nSiC™ products take advantage of silicon carbide’s superior performance over silicon to deliver market leading efficiency at an attractive cost. Based on a proprietary SiC process technology combined with a very compact cell design and the latest advances in thin wafer technology, NXP’s SiC products deliver improved thermal characteristics and lower Figures of Merit (Qc x VF). This 650 V SiC family of 4 A to 10 A diodes in TO-220 and DPAK packages offers great flexibility to designers looking for efficiency, robustness and reduced time to market and system cost.