CPH3356: Power MOSFET, -20V, 137mΩ, -2.5A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.
特性- 1.8V Drive
- Low On-Resistance
- ESD Diode - Protected Gate
- Pb-Free, Halogen Free and RoHS Compliance
| 优势- Drive at low voltage
- Minimize conduction loss
- ESD resistance
- Environment friendliness
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应用 | 终端产品- White goods, Game, Mobile Scanner, Recorder, Ink Jet Printer
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数据表 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| CPH3 | 318BA (47.7kB) | O |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| CPH3356-TL-H | Active, Not Rec | Pb-free
Halide free | CPH-3 | 318BA | 1 | Tape and Reel | 3000 | $0.1253 |
| CPH3356-TL-W | Active | Pb-free
Halide free | CPH-3 | 318BA | 1 | Tape and Reel | 3000 | $0.116 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| CPH3356-TL-W | P-Channel | Single | -20 | 10 | -1.4 | -2.5 | 1 | 203 | 137 | | 3.3 | | 0.72 | | 250 | 60 | 45 |
